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Modern computer systems require fast, large and reliable memories to handle information explosion. With this goal in mind, not only deployment of main memories with new technologies are necessary, but also adopting innovative solutions for addressing newfound challenges must be considered as a priority. Recently, phase change memory (PCM) appeared as a preferred candidate for substituting DRAM. PCM...
High static power consumption and insufficient scalability of the commonly used DRAM main memory technology appear to be tough challenges in upcoming years. Hence, adopting new technologies, i.e. non-volatile memories (NVMs), is a proper choice. NVMs tolerate a low number of write operations while having good scalability and low static power consumption. Due to the non-destructive nature of a read...
Phase change memory (PCM) has rapidly progressed and surpassed dynamic random-access memory in terms of scalability and standby energy efficiency. While PCM cell size is marching toward the minimum achievable feature size, recent prototypes effectively improve device scalability by storing multiple bits per cell. Unfortunately, the density advantage of multilevel cell (MLC) PCM devices comes at the...
Although phase change memory with multi-bit storage capability (known as MLC PCM) offers a good combination of high bit-density and non-volatility, its performance is severely impacted by the increased read/write latency. Regarding read operation, access latency increases almost linearly with respect to cell density (the number of bits stored in a cell). Since reads are latency critical, they can...
In this paper, we study the problem of resistance drift in an MLC Phase Change Memory (PCM) and propose a solution to circumvent its thermally-affected accelerated rate in 3D CMPs. Our scheme is based on the observation that instead of alleviating the problem of resistance drift by using large margins or error correction codes, the PCM read circuit can be reconfigured for tolerating most of the resistance...
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