Ti
3SiC
2 samples were irradiated by a 6‐MeV Si
+ ion to a fluence of 2
10
16 Si
+ ions/cm
2 at 300°C followed by annealing at 900°C for 5 h. A transmission electron microscope was used to characterize microstructural evolution. The phase of Ti
3SiC
2 transformed from the hexagonal close‐packed (HCP) to a face‐centered cubic structure after irradiation. Hexagonal screw dislocation networks were...