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The surface morphological development during epitaxial overgrowth of AlGaN on microhoneycomb (μ‐HC) patterned relaxed AlGaN/AlN/sapphire templates is studied. Optimization of μ‐pattern design and influence of various growth parameters are carried out in search for conditions resulting in coalescence of μ‐HC structures into planar layers or ordered arrays of V‐pits with well‐defined crystallographic...
The conditions required for a high growth rate of AlN in a 3 × 2″ showerhead‐type vertical flow metalorganic vapor phase epitaxy (MOVPE) reactor are studied. It is found that at the standard growth conditions (low V/III, 50 mbar, 1110 °C, H2), the growth rate linearly increases with the trimethylaluminium (TMAl) flow rate until about 280 μmol min−1 with some drop of precursor utilization efficiency...
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