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Charge trapping in ultra-thin ZrHfOx/RuOx/ZrHfOx high-k stacks has been investigated. ZrHfOx/RuOx/ZrHfOx tri-layer may be a more proper high-k dielectric than ZrHfOx, because of its smaller equivalent oxide thickness, leakage current and relaxation current. Positive charges trapped in both bulk and interface contribute to the interface state generation and Vfb, shift when electrons are injected from...
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