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Low-frequency noise measurements were performed on n-channel MOSFETs with a novel ultra-low 0.3-nm equivalent-oxide-thickness (EOT) interfacial layer (TmSiO) and two different bulk high-$k$ dielectrics (Tm2O3 and HfO2). The MOSFETs were fabricated in a gate-last process and the total gate-stack EOT was 1.2 and 0.65 nm for the Tm2O3 and HfO2 samples, respectively. In general, both gate-stacks resulted...
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