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NdON, HfON, and their mixtures (NdxHf(1−x)ON) with different Hf contents are adopted as the gate dielectrics of pentacene organic thin‐film transistors (OTFTs). Their capacitance–voltage characteristics reveal that the Hf incorporation generates negative fixed charges in the dielectric for assisting the applied gate voltage, thus achieving a low threshold voltage for the OTFT. X‐ray photoelectron...