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This paper presents an adaptive Zero-Voltage-Switching control (ZVS) method and a hybrid current control strategy for the GaN-based MHz Totem-pole PFC rectifier. This novel ZVS control achieves the minimum ZVS time margin and maximum switching frequency clamping by adaptively controlling the synchronous rectifier (SR) turn off current. This adaptive SR turn off current control is a unified control...
This paper presents a novel GaN transistor based bidirectional isolated DC-DC converter for stationary energy storage device (SESD) for 400V DC microgrid. The improvements achieved in the application includes: first, benefitting from the internal ultra-fast free-wheeling diode, the converter's operation range can be expended to light load conditions (switches operate in hard switching). The light...
This paper presents a distributed energy storage device (DESD) based on a novel isolated bidirectional DC-DC converter with 650V GaN transistors. The device integrates a low-voltage (13.2V) Li-ion battery pack, an embedded bidirectional DC-DC converter and wireless communication system. The three parts are packaged together, thus it can be directly connected to high-voltage (380V) DC grid, enabling...
The high speed, conductivity, and voltage blocking capability of the GaN HEMT facilitates higher efficiency, and smaller size of switched mode power supply designs. Characteristics such as these are important in the solar energy field, in which every extra Watt of harvestable power is extremely valuable. In this paper, the design and experimental results of a 250W 240VAC photo-voltaic micro-inverter...
A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low taper angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new taper etching process, exhibits stable forward blocking capability with low leakage current...
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