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The depth profiles of lattice strain near the interface regions of LaAlO 3 /Si and the SiO 2 interfacial layer/Si were investigated by the ion channeling technique using high-resolution Rutherford backscattering spectroscopy (HRBS). In the case of the LaAlO 3 /Si stack, horizontal tensile strain in the Si near the interface was clearly observed. However, this strain was relaxed...
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