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Tunneling field-effect transistor (TFET) could achieve sub-60 mV/decade subthreshold swing S at room temperature and could enable ultra-low supply voltage VDD and power consumption. Drive current above 100 μA/μm was achieved in III-V-based n-channel TFETs (nTFETs), due to the direct BTBT and high electron mobility in III-V materials [1–2]. However, more research is needed for p-channel TFET (pTFET)...
GeSn nMOSFETs were demonstrated. Key highlights of this work include 400 °C GeSn n+/p junction formation and GeSnO2 interfacial layer formation, and their integration. GeSn n+/p junction demonstrate a high doping concentration of 1020 cm−3 and a record high forward bias current of 320 A/cm2. Substantially improved SS is achieved in GeSn nMOSFET in comparison with Ge control, which indicates the high...
In this work, we report high mobility Ge0.958Sn0.042 p-MOSFETs where the GeSn surface was (NH4)2S passivated prior to gate dielectric deposition. Ge0.958Sn0.042 p-MOSFETs with (NH4)2S passivation demonstrate a peak effective mobility of 509 cm2/V·s and a subthreshold swing S of 220 mV/decade.
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