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The photovoltaics industry is expected to slowly transition from p-type mono-Si cells to n-type mono-Si over the next several years. Diffusion of boron into silicon to fabricate a p+ emitter can result in an efficiency-reducing boron rich layer (BRL) which can be removed reliably with an NF3 dry-etch process. The emitter should be passivated with a film that does not result in minority carriers being...
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