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In this research, an optimized process scheme for through glass via (TGV)/through silicon via (TSV) fabrication is proposed to solve the difficulty of copper (Cu) filling in TGV/TSV. Kelvin structure, daisy chain, and comb structure are fabricated for evaluating electrical performance. Comparison between TGV and TSV shows that the power loss and overall process steps (cost) of TGV is lower than TSV...
In this research, a single sided heating method is developed to solve the issue of metal oxidation at bottom substrate without antioxidant metal coating in chip-to-wafer bonding. By using optimized bonding parameter, the bonding quality and electrical performance is better than double sided heating in chip-to-wafer bonding. With the help of Cu/In low temperature bonding and single sided heating approach,...
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