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CoFeB/MgAl2O4/CoFeB magnetic tunnel junctions (MTJs) with the barrier sputtered from sintered MgAl2O4 target have been successfully fabricated. Dependence of tunneling magnetoresistance (TMR) ratio on both MgAl2O4 deposition pressure and postannealing temperature has been studied. The TMR ratio of more than 50% at room temperature was obtained with an annealing temperature of 325 °C and MgAl2O4 deposition...
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