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This paper deals with the development of GaN-based solution for X Band T/R Module of future SAR generations. In Particular HPA and LNA MMIC solutions have been investigated and produced using a 0,25 µm GaN HEMT process provided by SELEX-SI featured by a 4W/mm power density. Obtained results demonstrate promising performance both in Output Power and Noise characteristics and open the wider perspectives...
This contribution presents a novel narrow-band design methodology for low-noise amplifiers which is based on the use of the noise measure and of the reactive interstage networks. The most interesting result is the chance of obtaining a simultaneous matching condition both at the input and at the output ports of the amplifier without sacrifying the noise factor, which is also optimized. Moreover, as...
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