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The proof of concept of a new extended-gate pH sensor, developed on an industrial ultrathin body and buried oxide (UTBB) fully-depleted silicon-on-insulator (FDSOI) transistor, is reported. The strong electrostatic coupling between the front gate and back gate of UTBB FDSOI devices provide a signal amplification opportunity for sensing applications. On the other hand, the biasing capability through...
This paper proposes the fabrication, together with morphological and electrical characterizations of complementary resistive switches using a nanodamascene process. Complementary switches electrical performance are coherent with ReRAM fabricated and characterized with the same procedure that showed Ron/Roff ratios of 100. Complemetary operating voltages of Vth1,3 = |0.8| V and Vth2.4 = |1.1| V are...
This paper presents the fabrication, electrical characterization, and simulation of planar single electron transistors. Two single electron transistors facing each other have been used to demonstrate single charge detection. The manufacturable fabrication process combined with both single charge detection and the simulation tool are a powerful platform for quantum cellular automata that can be applied...
In this paper, we show a process for the fabrication of planar sub-attofarad capacitance metal-insulator-metal tunnel junctions with nanometer size. We show the engineering of the material stack, anti-diffusion barrier and electrode metal as well as the result of improved characteristics and stability in time of the devices. This engineering is supported by a simulation tool we developed and its goal...
This paper presents physical and electrical characterizations of fabricated ultrathin titanium passive devices embedded in silicon dioxide. The nanowires and Ti/TiO2/Ti metal-insulator-metal capacitors are fabricated with a flexible process based on a nanodamascene technology. A model of the titanium resistivity versus thickness based on experimental data is proposed. The combination of the nanodamascene...
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