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A reproducible inductively coupled plasma (ICP) etching process using simultaneously SF6/C4F8 gases for the fabrication of ultra-shallow Si3N4 nanostructures is presented. The effect of varying etching parameters such as the coil and platen RF power, the chamber pressure, the C4F8 flow rate and the platen temperature on Si3N4 and ZEP etch rates are investigated. The passivation and etching chemistry...
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