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The effects of biased irradiation on Ge MOS capacitors with HfxZr1–xOy (0.43 < x < 1) gate dielectrics have been investigated. These devices were irradiated by a 662-KeV Cs$^{137} \gamma $ -ray radiation source with 0.5 or –0.5 V gate bias. Prior to irradiation exposure, leakage behavior and bias-instability of HfxZr1–xOy films were also examined. Gate leakage current density increases with...
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