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This paper describes metal-oxide-semiconductor field effect transistors working as detectors of THz radiation integrated monolithically with a source follower (the common-drain amplifier). This solution makes lock-in measurements independent of the length of the connecting cable.
Experimental and theoretical investigations of the influence of substrate thickness on the performance of Si field effect transistor terahertz detectors are presented‥ We show that in the case of planar metal antennas a significant portion of incoming radiation, instead of being coupled to the transistors, may be coupled to the substrate leading to important responsivity losses‥ The ways of avoiding...
Silicon metal-oxide-semiconductor field-effect transistors with four different types of planar antennas were used to scan the cross section of radiation beams of 0.1 THz and 0.336 THz. Transistors were mounted on a support and bonded with Au wires. We show that the map of the power distribution in the beam cross-section depends on details of mounting of a transistor (in particular, on a configuration...
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