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Carbon doping of In 0.53 Ga 0.47 As has been investigated in a production molecular beam epitaxy (MBE) system equipped with a CBr 4 gas line. Growth temperature and As 4 flux effects on surface morphology and efficiency of carbon doping are studied. Hole concentrations from 1.7×10 17 to 1.3×10 20 cm −3 have been obtained. A first set of samples...
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