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This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary conditions (BC). The simulated behaviour of devices is strongly influenced by BC, especially in the case of submicron gate lengths. Standard models prescribe a neutrally charged...
High performance In 0.32 Al 0.68 As/In 0.33 Ga 0.67 As double heterojunction metamorphic high electron mobility transistors (DH-MMHEMT) have been grown by molecular beam epitaxy on GaAs substrates. An inverse step metamorphic buffer has been used to reach a relaxation rate close to 98% and a mean cross hatch...
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