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GaN-based pin alpha-particle detectors grown on sapphire substrates have been subjected to 10 MeV electron irradiation over a cumulative dose range of 0 to 200 kGy. The pre- and post-irradiation detectors have been characterized with current–voltage and capacitance–voltage measurements, charge collection efficiency (CCE), and alpha-particle pulse-height spectroscopy. The results show that the performance...
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