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The field of III-V integration onto Si for high-efficiency, low-cost tandem photovoltaics has advanced rapidly in recent years. While silicon technology is quite mature, GaAsP solar cells have exhibited relatively low efficiencies <10%. In this work, we investigated the effect of temperature on the metamorphic growth of single-junction 1.7 eV GaAsP/GaP/Si solar cells, yielding improvements in solar...
We demonstrate metamorphic 1.66 eV GaAs0.77P0.23 solar cells grown by molecular beam epitaxy on exact (001) GaP/Si templates. Cascading such a cell with a 1.1 eV Si junction enables theoretical efficiencies of > 37% under the AM1.5G spectrum. We optimized the initial GaP growth on pseudomorphic GaP/Si templates to promote maximum strain relaxation with minimal nucleation of new threading dislocations...
We demonstrate metamorphic 1.73 eV GaAs0.72P0.28 solar cells grown by molecular beam epitaxy on high-quality GaP/Si templates and compare them to cells co-grown on bulk GaP. Cascading such a cell with a 1.1 eV Si junction in the substrate could enable a theoretical efficiency of 37% under the AM1.5G spectrum. Electron beam-induced current studies of our cells reveal a threading dislocation density...
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