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The impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO2/In0.53Ga0.47As metal–oxide–semiconductor capacitors (MOSCAPs) has been studied. Excellent interface quality of high-$k$ /III–V is achieved by aluminum nitride (AlN) interfacial passivation layer, including strong inversion behaviors and unpinned Fermi level. The band alignment of HfO2/AlN/In...
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