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High quality GaN was grown on 200 mm Si (111) substrates by using AlN and 3 step-graded AlxGa1-xN as the buffer layer in a metalorganic chemical vapor deposition system. We have investigated the influence of NH3 pre-flow time on the threading dislocation density (TDD) of AlN, AlGaN buffer layers and GaN layers. It was observed that the compressive stress introduced into the buffer layer and GaN is...
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