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Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density of states. To exploit these features for the design of a steep slope transistor, we propose a Two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) of $\sim 14$ mV/dec and a high on-current of $\sim 300~\mu $ ...
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