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Gallium nitride (GaN) based high-electron-mobility transistor (HEMT) is getting popular in power electronics applications due to its low on-state resistance and superior switching characteristics. The on-state resistance of the switch is an important factor in the efficiency of the GaN switch based power converter. Firstly, the basic principle of operation of a normally-on GaN/AlGaN HEMT is reviewed...
Silicon Carbide (SiC) is a compound semiconductor has ten times the dielectric breakdown field strength, three times the band-gap, and three times the thermal conductivity of silicon (Si). SiC MOSFETs can be operated at higher switching frequencies and higher ambient temperatures than Si MOSFETs. This paper deals with design, fabrication and testing of a gate driver circuit for driving SiC power MOSFETs...
In this paper focus is to study various transition sub-intervals of an IGBT during switching events. The relationship of these transition duration with the switching voltage, device current and junction temperature is studied experimentally. This study is further extended to understand the effect of these time duration deciding the dead time between the switching of positive and negative devices in...
For safe operation of voltage source converters, dead-time is provided to the IGBTs that belong to a single leg. While a large value of dead-time prevents dc-bus shoot-through, it also causes error in the output voltage of the power converter, leading to distortion of line currents and increased harmonic content in them. The problem is more severe in case of high switching frequency operation of the...
Dead-time is introduced between the gating signals to the top and bottom switches in a voltage source inverter (VSI) leg, to prevent shoot through fault due to the finite turn-off times of IGBTs. The dead-time results in a delay when the incoming device is an IGBT, resulting in error voltage pulses in the inverter output voltage. This paper presents the design, fabrication and testing of an advanced...
Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in...
Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out...
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