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In this paper focus is to study various transition sub-intervals of an IGBT during switching events. The relationship of these transition duration with the switching voltage, device current and junction temperature is studied experimentally. This study is further extended to understand the effect of these time duration deciding the dead time between the switching of positive and negative devices in...
In this paper the focus is to study the switching characteristic of antiparallel diode in an IGBT module. The switching characteristic parameters reverse recovery time, peak reverse recovery current and corresponding energy loss during the diode turn-off transition are studied experimentally. The relationship of these characteristic parameters with the operating conditions, namely, switching voltage,...
For safe operation of voltage source converters, dead-time is provided to the IGBTs that belong to a single leg. While a large value of dead-time prevents dc-bus shoot-through, it also causes error in the output voltage of the power converter, leading to distortion of line currents and increased harmonic content in them. The problem is more severe in case of high switching frequency operation of the...
Dead-time is introduced between the gating signals to the top and bottom switches in a voltage source inverter (VSI) leg, to prevent shoot through fault due to the finite turn-off times of IGBTs. The dead-time results in a delay when the incoming device is an IGBT, resulting in error voltage pulses in the inverter output voltage. This paper presents the design, fabrication and testing of an advanced...
In traction applications, power electronic converters experience wide variation in DC link voltage during operation. The purpose of this paper is to study the variations in turn-on and turn-off switching energy losses in the IGBTs with the DC link voltage. The IGBT switching characteristics are measured at various operating conditions, and turn-on and turn-off switching energy losses are determined...
Usually the top and bottom IGBT devices in an inverter leg are of the same make (i.e. from same manufacturer). At low power level, these two devices even may be contained in the same module. However at high power levels the top and bottom devices are in separate modules. Sometimes, in the event of device failure, device of particular make may be replaced by one of another make, but of same ratings...
Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in...
Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out...
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