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We report on vertical nanowire FET devices (VNWFETs) with a gate-all-around (GAA) configuration, which offer promising opportunities to enable further CMOS scaling and increased circuit layout efficiency. They allow up to 30% denser SRAM bitcells with improved read and write stability, smaller minimum operating voltages (Vmin), and lower standby leakage values as compared to cells built with lateral...
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