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Ge − ions were implanted into SiO 2 layer three times by changing the energy of 50, 20 and 10keV in this order to form germanium nanoparticles at a relatively wide-depth region. Then, the sample was annealed at 600–900°C for 1h. Although Ge nanoparticles formation was confirmed by cross-sectional TEM observation, XPS analysis showed about 30–60% of the Ge atoms in SiO 2 on...
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