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A quantitative description of the dynamics of silicon wafer direct bonding is proposed, and the contact wave for bonding front propagation is modeled as a function of time. The changes in exhaust gas power, accumulated deformation power and wafer surface energy during bond processing have been studied systematically, and the governing differential equation of the contact wave position is deduced from...
A spontaneous low-temperature bonding process was developed for silicon wafer direct bonding. Experiments were conducted to investigate critical process parameters with blank silicon wafers at 120degC. The effects of interfacial micro/nano- scale roughness on bonding were mainly considered. The results showed that different interfacial roughness may lead to three bonding possibilities, namely spontaneous...
Ultraviolet (UV) exposure process, as an additional process following traditional wet chemical activation processes, was applied to low temperature hydrophilic silicon wafer direct bonding. The UV source emitted mixed spectrum of light with 254 nm and 185 nm wavelength. The comparative trial was performed to investigate the effects of additional UV exposure and to optimize the exposure time. Infrared...
It has been widely accepted that the threshold of surface roughness for low temperature hydrophilic wafer bonding is 0.5nm. However, we have proven that wafers with higher surface roughness can be bonded. By the aid of proper contact pressure, we have bonded the wafers with roughness of 1.0nm successfully and found that thinner wafers were easier to be bonded than thick ones whereas wafers with thickness...
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