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This paper presents a new compact electrothermal model for GaN high electron mobility transistors (HEMTs). An analytic and succinct expression for the drain current Ids is acquired by combining surface potential based method and channel division method. Self-heating effects are described in the model by introducing an empirical expression for the critical electric field Ec as a function of temperature...
This paper presents an analytical parameter extraction method for empirical large‐signal model of GaN high electron mobility transistors (HEMTs) including self‐heating and trapping effects. Every parameter in the model is extracted in an analytic way. An improved Angelov I–V model specific for GaN HEMTs with 53 parameters is employed. The I–V model parameters are divided into blocks according to their...
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