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This work explores possible cross‐slip mechanisms of gliding type <a > = a /3[1 –2 1 0] dislocation loops in wurtzite gallium nitride (GaN) as a function of slip plane. A modified form of the dislocation dynamics code ParaDiS was employed using isotropic linear elasticity and dislocation mobilities estimated in part from molecular dynamics (MD) simulations. Under an externally applied uniform...
In this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as an alternative...
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