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This letter investigates the design space for feasible load impedances of broadband continuous class-F power amplifier (PA) using the nonlinear embedding transfer function. This can overcome the limitation of anticlockwise trajectory of second-harmonic impedance on Smith chart. The approach starts with the design at intrinsic plane based on generic representation of drain voltage and current waveforms...
This paper proposes a reconfigurable and concurrent dual-band power amplifier for upcoming wireless applications such as LTE carrier aggregation. The designed power amplifier operates concurrently at 1600 MHz and 2100 MHz when the switches are OFF; whereas, when the switches are ON, the power amplifier operating frequencies shifts to 1800 MHz and 2300 MHz. Thus, the proposed power amplifier topology...
This paper presents the design of a GaN-based class-F power amplifier using nonlinear embedded model of GaN HEMT transistor. The non-linear device embedding model has been utilized for projecting the desired mode of operation from the current reference plane to the external reference plane. The design scheme is experimentally verified by using a 15-W GaN HEMT device from CREE to design 15 W Class-F...
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