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This work focuses on the equivalent‐circuit modeling of microwave field‐effect transistors. Although the purely direct approach allows obtaining a good prediction accuracy in a straightforward way without the need of any optimization, optimization algorithms are often used to achieve an improved accuracy at the cost of a higher modeling complexity. The pros and cons of empowering the direct approach...
This Special Issue reviews the state‐of‐the‐art and new trends in modeling of Gallium Nitride transistors. Aspects of transistor characterization, simulation, and design all receive significant attention, highlighting the potential of this disruptive technology in the development of future communication systems.
In this paper, we describe an extraction procedure of nonlinear models for microwave field‐effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we extract the parameters by combining direct extraction and numerical optimization. We determine a first estimate of the model parameters by few DC and S‐parameter measurements. Next, we refine the parameters by optimization...
As well as largely exploited for microwave high‐power applications, aluminum gallium nitride (AlGaN)/GaN high electron mobility transistor (HEMT) technologies have demonstrated promising results for the design of low‐noise, high dynamic range, and highly robust amplifiers. In this manuscript, we describe the design and characterization of a Ku‐band monolithic microwave integrated circuit low‐noise...
Gallium nitride high electron‐mobility transistors have gained much interest for high‐power and high‐temperature applications at high frequencies. Therefore, there is a need to have the dependence on the temperature included in their models. To meet this challenge, the present study presents a neural approach for extracting a multi‐bias model of a gallium nitride high electron‐mobility transistors...
In this paper, a nonlinear model of a commercial 10‐W laterally diffused metal oxide semiconductor (LDMOS) transistor for FM transmitters is identified. It is based on high‐frequency small‐signal measurements for the identification of both the parasitic network and the strictly nonlinear dynamic effects, whereas low‐frequency large‐signal measurements are exploited for the description of the dynamic...
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