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We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results...
The development of a 835-900-GHz biasable fundamental balanced mixer using planar GaAs Schottky diodes is presented. The monolithic microwave integrated circuit integrates two planar Schottky anodes in a balanced configuration, stripline filtering elements, and on-chip capacitor on a thin GaAs membrane. At 850 GHz, double side-band (DSB) mixer noise temperature of 2660 K and conversion loss of 9.25...
We have developed a robust wafer-level substrate bonding process that has allowed us to bond CVD diamond to GaAs membrane-based submillimeter-wave Schottky diode frequency multipliers. The high thermal conductivity of CVD diamond allows the chip to dissipate heat more efficiently thus increasing the power handling capability of the chips. This process has resulted in single-chip multiplier devices...
Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.
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