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This paper presents a reconfigurable dual - and -band bidirectional amplifier and a -band active circulator in a 45-nm CMOS silicon-on-insulator (SOI) technology. The circuits rely on reconfigurable feedback networks to manipulate the traveling wave along a transmission line. The dual - and -band bidirectional amplifier operates at 40 and 81 GHz, with peak gain of more than 4.2 dB in all...
A dual-band, bidirectional amplifier is proposed for millimeter-wave front-ends in CMOS silicon-on-insulator (SOI). The circuit is electronically controlled to amplify in either the forward or reverse direction at either 40 GHz (Q-band) or 81 GHz (W-band). The measured amplifier has a gain variation of 20 dB with a peak gain of 4.6 dB at both 40 GHz and 81 GHz. The circuit is fabricated in a 45-nm...
A V-band BiFET Constructive Wave Power Amplifier (BiFET CWPA) is presented that allows for a graceful degradation in operation. The four-stage amplifier operates from 52–62 GHz with a peak small-signal gain of 10.7 dB at 60 GHz. Peak output saturation power (Psat) is 16.4 dBm with associated power-added efficiency (PAE) of 15.3%. The amplifier nominally consumes 52 mW (4 V × 0.13 mA) and the active...
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