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Positron annihilation is a non-destructive tool for investigating vacancy-type defects in materials. Detectable defects are monovacancies to vacancy clusters, and there is no restriction of sample temperature or conductivity. Using this technique, we studied defects introduced by Mg-implantation in GaN. Mg ions of multiple energies (15–180 keV) were implanted to provide a 200-nm-deep box profile with...
Vacancy‐type defects in Mg‐implanted GaN were probed using a monoenergetic positron beam. Mg ions of multiple energies (15–180 keV) were implanted to provide a 200‐nm‐deep box profile with Mg concentration of 4 × 1019 cm−3. The major defect species of vacancies introduced by Mg‐implantation was a complex between Ga‐vacancy (VGa) and nitrogen vacancies (VNs). After annealing above 1000 °C, these defects...
A comparative study of the electrical and interface characteristics for on GaN MOS capacitors with as‐deposited and post‐annealed Al2O3 gate dielectric, deposited via atomic layer deposition (ALD), has been performed to gain insight into the effects of annealing on the MOS interface properties. Comparison is also made to an annealed 65nm PECVD SiO2 gate dielectric. We have performed C‐V and conductance...
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