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Pseudomorphic Ge0.91Sn0.09 on Ge on Si with strong photoluminescence and low defect density is used for p-MOSFET channels. The mobility of Ge0.91Sn0.09 Quantum Well p-MOSFETs are higher than control Ge p-MOSFETs due to hole population in the GeSn wells. The 7.5% mobility enhancement on <110> channel direction is observed using external transverse uniaxial tensile strain (∼0.11%). The highest...
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