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CsPbX3 (X = halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded as promising functional materials because of their tunable optoelectronic characteristics and superior stability to organic–inorganic hybrid halide perovskites. Herein, nonvolatile resistive switching (RS) memory devices based on all‐inorganic CsPbI3 perovskite are reported. An air‐stable CsPbI3 perovskite film...
Cesium lead iodide (CsPbI3) perovskite, an all‐inorganic halide perovskite, is synthesized on a platinum‐coated silicon substrate for an ultra‐low operating voltage resistive switching memory device by Soo Young Kim, Ho Won Jang, and co‐workers in article number 1705783. An electrochemical metallization mechanism involving metal conducting filaments is proposed to explain the resistive switching behavior...
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