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The creation of spin current (i.e. the flow of spin angular momentum) is a central basis of spintron-ics [1,2], in which digital information is represented by the spin degree of freedom. It has been intriguingly established that the spin current in ferromagnetic tunnel contacts can be created either by electrical means (induced by a bias voltage) [3,4] or by thermal means (driven by a heat flow) [5,6]...
The formation of doped Al 2 O 3 tunnel barriers, by plasma oxidation of doped Al, has been studied by in situ Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Ultrathin layers (<1ML) of Ni or Si dopants were incorporated into an Al film at different depths, and subsequently plasma oxidized. Comparison of AES peak heights reveals two different types of...
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