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A 200–225 GHz SiGe combiner Power Amplifier (PA) based on a wideband 4-way power combiner architecture is presented in this paper. The circuit is implemented in a 130 nm SiGe BiCMOS technology with fT/fmax of 250/370 GHz. A parallel power combining architecture based on the low-loss transmission line based zero-degree combiner is used to combine the power from 4 PA cores. At 215 GHz, the Psat is 9...
In this paper, we present an on-off-keying (OOK) modulator with a local oscilator (LO) at 240 GHz for incoherent high data rate communication systems. The modulator topology is similar to a selector where one of the data inputs is connected to the ground and the baseband signal is fed to the clock input. This circuit is implemented in 130 nm SiGe HBT technology with fT/fmax of 250/370 GHz. The measured...
A 246 GHz source for imaging and incoherent high data rate communication applications is presented. The source consists of a fundamental free-running Colpitts oscillator cascaded with a differential common base (CB) buffer stage and a 3-stage power amplifier (PA). The circuit has been fabricated in a 130 nm SiGe HBT technology with fT/fmax of 300/500 GHz. At 246 GHz, the measured output power is 2...
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