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GaAs space solar cells always suffered from the complex and hostile space environment. Space solar cell reliability is crucial factor to ensure the normal operation of space satellites. A method of modeling the degradation of GaAs space solar cells is proposed here. The method is to find one crucial performance parameter to depict the degradation process. By applying compound Poisson process and general...
Na-containing surface compounds is likely to form during the formation of CZTS absorber. Still, the understanding of any potential influence on buffer layer growth and device performance is limited. In this work, we observed that NaxS compound can possibly form on the CZTS surface after annealing, and negatively affect the growth of the subsequent CdS buffer. The NaxS compound is oxidized to Na2SO...
Previously, an innovative way to reduce rear interface recombination of Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells has been successfully developed. In this work, this concept is established in Cu2(Zn,Sn)(S,Se)4 (CZTSSe) cells, to demonstrate its potential for other thin-film technologies. Therefore, ultra-thin CZTS cells with an Al2O3 rear surface passivation layer having nano-sized point openings are...
This study investigates the possibility of Raman spectroscopy as an in-situ monitoring tool for the synthesis of the solar cell material Cu2ZnSnS4 (CZTS) by annealing a stacked precursor ZnS/Cu2SnS3 on a Mo-coated glass substrate. Temperature dependent behaviour of Raman scattering for ZnS and Cu2SnS3 is studied. Both phases can still be detected at respectively 450 °C and 550 °C. Annealing of Mo/CTS/ZnS...
In this study the influence of absorber layer thickness on the trends of the four current-voltage (J-V) parameters for our CZTS solar cells is studied with simulations and compared with empirical data. In the case of dominating interface recombination we find that open-circuit voltage and fill-factor are largely unaffected by thickness variations 0.5 – 2.0 µm, whereas short-circuit current, and thereby...
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