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A cryogenic ultra-low noise CMOS CSA has been developed for point-contact HPGe detector for CDEX dark matter search experiment. Several design techniques have been adopted including adjustable biasing for low temperature operation, fast reset circuits without increasing parallel noise and an output stage with high capacitive drive capability. A prototype chip has been fabricated in 0.35µm CMOS technology...
A readout ASIC for GEM (gas electron multiplier) detectors is present. It consists of a low-noise charge preamplifier, a CR-(RC)4 semi-Gaussian shaper and a class-AB buffer for each channel. Fabricated in 0.35 mum CMOS process, it takes about 150 mum x 1500 mum die area and dissipates less than 10 mW per channel. The detailed design and preliminary test results are reported.
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