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Layer-by-layer growth on nominally oriented (111)A GaAs substrate has been performed by atomic layer epitaxy (ALE). Under enough AsH 3 feeding, the growth rate saturation of one-fourth monolayer per cycle was observed at the T g range between 560°C and 600°C and three-eighths of monolayer per cycle at the T g range below 550°C on (111)A substrate. The drastic change of the...
Characteristics and mechanisms, of the crystallographic selective growth by atomic layer epitaxy (ALE) and the localized ALE growth over the nanometer scale area, are discussed focusing on the surface process. The experimental results indicate that higher growth temperature, and longer hydrogen purge time after AsH 3 supply, promote the crystallographic selectivity of GaAs ALE growth. The...
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