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We propose a model Hamiltonian for van der Waals tunnel transistors relying on a few physical parameters that we calibrate against DFT band structure calculations. This approach allowed us to develop a fully three-dimensional (3-D) NEGF based simulator and to investigate fundamental and design aspects related to van der Waals tunnel transistors, such as: (a) area and edge tunneling components, and...
Following the intriguing results analytically obtained for the shot noise suppression in wide and short graphene samples with doped contacts, efforts were made to achieve an experimental verification, and, while one experiment yielded a clear confirmation of the theory, another one provided data with no clear dependence of the Fano factor on gate voltage. This was attributed to the presence of a disordered...
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