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This work demonstrates a simple process for fabricating an electron-selective contact with a contact resistivity of 76 mΩ·cm2 and a contact recombination current density of 10 fA/cm2 on n-type crystalline silicon. The contact is facilitated via an amorphous silicon (∼ 6.5 nm) / magnesium fluoride (∼ 1 nm) / aluminium stack. The application of this novel electron-selective contact enables fabrication...
In recent years a significant amount of effort has been devoted towards the development of dopant-free carrier selective contacts for crystalline silicon (c-Si) solar cells. This short manuscript surveys a range of materials which have the potential to induce carrier-selectivity when applied to c-Si, including metals, metal oxides, alkali / alkaline earth metal salts, and organic conductors. Simple...
This paper explores the application of transparent MoO$_{x}$ ( x<3) films as hole-collecting contacts on the rear side of crystalline silicon solar cells. Two dimensional simulations, which consider experimental contact recombination J0c and resistivity ρc values, indicate that the benefits of direct MoO$_{x}$ -based contacts are best exploited by reducing the rear contact fraction. This concept...
This paper explores the application of transparent MoOx (x<3) films as hole-collecting contacts on the rear-side of crystalline silicon solar cells. 2D simulations, which consider experimental contact recombination J0c and resistivity ρc values, demonstrate that the benefits of the MoOx based contacts are best exploited by reducing the rear contact fraction. This concept is demonstrated experimentally...
Effective surface treatments suppress possible recombination losses and confine photogenerated electrons and holes within the bulk of the silicon wafer, thus maximizing their number and the electrochemical potential that they can deliver to a load. For that to happen, it is necessary to create regions with a high conductivity for one carrier and low for the other, which is the basis for their separation...
We report on significant progress towards the application of reactive ion etched (RIE) black silicon (b-Si) as an alternative to the most commonly applied front-side textures utilized in the crystalline silicon photovoltaics industry - random pyramids and isotexture. The as-etched b-Si surface displays approximately 1% front side reflectance weighted across the solar spectrum, outperforming both random...
Based on a novel contact-space formulation, this paper presents a new algorithm to find two-fingered caging grasps of planar polygonal objects. We show that the caging problem has several useful properties in contact space. First, the critical points of the cage representation in the hand's configuration space appear as critical points of an inter-finger distance function in contact space. Second,...
This paper introduces the Time-Optimal Planning and Execution (TOPE) problem, in which the aim is to minimise the total planning and execution time required to achieve a goal. The TOPE process is derived and shown to be capable of solving this problem in dynamic state spaces, by continuously calculating the optimum value of any system parameters that can affect this total time. Procedures are presented...
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