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A separated absorption and multiplication aval-anche photodiode for light detection to wavelengths as long as $2.25~\mu \text{m}$ is reported. Photons were absorbed in a metamorphic In0.75Ga0.25As layer, while the photo-generated electrons were injected into a lattice-matched In0.52Al0.48As multiplier on InP. A responsivity gain of 2.7 was attained at 2 $\mu \text{m}$ at 250 K and increased to...
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