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A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard...
In this contribution, we propose the use of artificially engineered dielectrics to enhance the front to back ratio of an on-chip printed antenna at 300 GHz. These artificial dielectrics (AD) are anisotropic in nature and are realized by introducing periodic metallic inclusions in the host substrate. Due to the anisotropy and the small physical thickness of this equivalent medium, surface wave efficiency...
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