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V. A. L. Roy and co‐workers present a novel hybrid architecture to achieve programmable transistor nodes that are analogous to flash memory. On page 390, they incorporate a resistive switching random access memory as a switch gate for a transistor on a flexible substrate. The controlled, well‐defined memory window, long retention time, and fast access speed of this novel hybrid device may open up...
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three‐layered structure is fabricated by utilizing...
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