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A new AlGaN/GaN heterojuction field effect transistor (HFET) employing the partial deep trench drain structure for high voltage application has been proposed and verified successfully to achieve low leakage current and small Rdson. In order to reduce leakage current and on-resistance of HFET devices, we propose a partial deep trench on drain edge adjacent to access region for the first time, which...
This study addresses the transient and steady-state performance of a >13 kV SiC p-ETO. The developed SiC p-ETO is based on a 1 cm2, 15 kV SiC p-GTO with an extremely low differential resistance. Static performance of the device, including the on-state voltage drop at different temperatures and different currents is carried out in this paper. Furthermore, transient performance of the device, including...
The short-circuit reliability of power switches plays very important part in many applications, where a 10μs short-circuit duration at 400V is usually required for 650V switches. Although emerging high voltage AlGaN/GaN HEMT technologies have shown switching advantages, the short-circuit performance has not been thoroughly investigated. In this work, we present an experimental study and numerical...
A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low taper angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new taper etching process, exhibits stable forward blocking capability with low leakage current...
A 6.5 kV 25 A dual IGBT module is customized and packaged specially for high voltage low current application like solid state transformer and its characteristics and losses have been tested under the low current operation and compared with 10 kV SiC MOSFET. Based on the test results, the switching losses under different frequencies in a 20 kVA Solid-State Transformer (SST) has been calculated for...
The characteristics and losses of 10-kV SiC MOSFETs, p-IGBTs and emitter turn-off thyristors (ETOs) were compared using the experimental measurements, PSPICE simulations and numerical simulations. Using the extracted loss information and method of loss calculation in the AC/DC rectifier and DC/DC converter, the frequency capability of these 10-kV SiC power devices in a 20 kVA solid-state transformer...
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