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This paper aims to comprehensively investigate the efficiency, power density and overall cost of input series output parallel (ISOP) medium voltage (MV) all silicon carbide (SiC) DC-DC converter in solid state transformers (SST). The medium voltage capability can be achieved by using either high voltage devices or multiple low voltage cells in series. Voltage rating of semiconductor devices, magnetic...
Newly developed 15 kV silicon carbide (SiC) power MOSFETs with fast switching capability enable the reduction of size, weight and complexity of medium voltage power converters. In medium voltage and high frequency applications, zero voltage switching (ZVS) is necessary since significant amount of energy is stored in MOSFETs' parasitic output capacitors. Recovering these energy is important for high...
The implementation of a novel bidirectional medium voltage AC-DC converter based on 10kV SiC MOSFET is presented in this paper. The improved topology allows the removal of the reverse blocking silicon diode in medium voltage SiC MOSFET module. Shoot-through problems and avalanche of the integrated silicon diode in traditional medium voltage bridge-type AC-DC converters are solved, allowing zero dead-time...
Based on the hybrid operation of interleaved flyback micro-inverter in Discontinuous and Boundary Conduction Modes (DCM and BCM), a novel adaptive snubber is proposed in this paper. The proposed snubber limits the drain-to-source voltage overshoot of the flyback's main switch during the turn-off process, enabling the use of lower voltage MOSFETs. It also recovers the stored energy in the leakage inductance...
The voltage dependent parasitic capacitances in high voltage semiconductor power devices such as MOSFET, JFET and IGBT play a vital role in the understanding and modeling of the device switching performance. In this paper, a simple but effective parasitic capacitance measurement method is proposed. The output capacitance Coss and the reverse transfer capacitance Crss can be measured simultaneously...
The superior material properties of the wide bandgap silicon carbide (SiC) semiconductors enable excellent device characteristics such as low on-resistance, high breakdown voltage, fast switching speed, high temperature operation, etc. 10-kV SiC junction barrier Schottky (JBS) diode prototype made by Cree was characterized in this paper first. The high-voltage (HV) and high-frequency rectifier consisting...
There is strong industrial need to boost the power density of the high voltage generators, for example, in medical radiology applications. 10 kV SiC JBS diode is potential candidate to be employed in the high voltage high frequency rectifier in future high voltage generator applications. However, the impact of the relatively large diode junction capacitance of SiC JBS diode cannot be neglected at...
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